., o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 irf710-713 mtp2n35/2n40 n-channel power mosfets, 2.25 a, 350-400 v power and discrete division description these devices are n-channel, enhancement mode, power mosfets designed especially for high speed applications, such as switching power supplies, converters, ac and dc motor controls, relay and solenoid driver and high energy pulse circuits. low rds(on) vgs rated at 20 v silicon gate for fast switching speeds idss, vds(on). specified at elevated temperature rugged low drive requirements ease of paralleling maximum ratings to-220ab irf710 irf711 irf712 IRF713 mtp2n35 mtp2n40 symbol vdss vdqr vgs tj. ts|g tl characteristic drain to source voltage' drain to gate voltage' rqs = 20 ko gate to source voltage operating junction and storage temperatures maximum lead temperature for soldering purposes, 1/8" from case for 5 s rating irf710/712 mtp2n40 400 400 20 -55 to +150 275 rating irf711/713 mtp2n35 350 350 20 -55 to +150 275 unit v v v c c maximum on-state characteristics rds(on) b static drain-to-source on resistance drain current continuous at tc = 25c continuous at tc= 100c pulsed irf710-711 3.6 1.5 1.0 6.0 irf712-713 5.0 1.4 0.9 5.0 mtp2n35/40 5.0 1.3 0.8 5.0 unit n a maximum thermal characteristics rftjc rftja pd thermal resistance, junction to case thermal resistance, junction to ambient total power dissipation at tc = 25c 6.4 80 20 6.4 80 20 2.5 80 50 c/w "c/w w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irf710-713 mtp2n35/2n40 electrical characteristics (tc = 25c unless otherwise noted) symbol characteristic win max unit test conditions off characteristics v(bh)dss loss igss drain source breakdown voltage1 1rf710/712/mtp2n40 irf711/713/mtp2n35 zero gate voltage drain current gate-body leakage current 400 350 250 1000 500 v ma pa na vgs = 0 v. id = 250 ua vds = rated vdss, vgs = 0 v vds = 0.8 x rated vdss. vgs = 0 v, tc-=125c vgs = 20 v, vds = 0 v on characteristics vos(lh) rds(on) vds(on) sis gate threshold voltage irf710-713 mtp2n35/2n40 static drain-source on-resistance2 irf710/711 irf71 2/71 3/mtp2n35/40 drain-source on-voltage2 mtp2n35/2n40 forward transconductance 2.0 2.0 0.5 4.0 4.5 3.6 5.0 13 10 v n v v s to) id = 250 ma. vds = vgs id = 1 ma, vds = vgs vgs = 10 v, id -0.8 a vgs = 10 v, i0 = 2.0 a vgs = 10 v, id- 1.0 a, tc = 100c vos =? 10 v, id - 0.8 a dynamic characteristics qss goss crss input capacitance output capacitance reverse transfer capacitance 200 50 15 pf pf pf vds = 25 v. vgs = 0 v ( = 1.0 mhz switching characteristics (tc - 25c, figures 11, 12)3 tdfon) t. ' td(oll) tf q9 turn-on delay time rise time turn-off delay time fall time total gate charge 10 20 10 15 7.5 ns ns ns ns nc vdd = 200 v, id = 0.8 a vgs -10 v, rqen = 50 h rqs = 50 ji vgs = 10 v, id = 2.0 a vdd = 200 v
irf710-713 mtp2n35/2n40 electrical characteristics (cont.) (tc = 25c unless otherwise noted) symbol characteristic typ max unit test conditions source-drain diode characteristics vsd tn- diode forward voltage irf710/711 irf712/713 reverse recovery time 380 1.6 1.5 v v ns ls = 1 .5 a; vgs = 0 v ls -1.3 a; ves = 0 v is -1.5 a; dls/dt = 25 a/f12s'c 0 0.6 1.0 1.5 2.0 2.5 3.0 id-drain current-a pciimcf figure 4 temperature variation of gate to source threshold voltage i- k o.. 3 o.? ? tn v(a?oat8 to source voltage?v -so 0 50 100 1 v-junction temperatum-'c
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